Diffuse interface modeling for electromigration induced void growth

Modeling and simulation of the temporal evolution of electromigration voids are critical to evaluate the reliability of interconnects of modern integrated circuits. In this work, the diffuse interface model is applied to investigate two different mechanisms of the void evolution due to electromigration. Two-dimensional numerical simulations have been performed and interconnect resistance increase has been monitored. The results recovered the main features of the electromigration induced failure observed in experiments.