A comparative study on conducted noise characteristics of SiC and GaN power transistor

Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) realize fast switching and it helps to increase the efficiency of power conversion. This report experimentally compares static and dynamic characteristics of wide-bandgap power switching transistors; SiC MOSFET and cascode GaN transistor, and focuses on their characteristics of electromagnetic interference (EMI) noise in a DC-DC boost converter.