堆积
化学
衍射
相变
平面的
相(物质)
氧化物
对称(几何)
化学物理
结晶学
阴极
电荷(物理)
统计物理学
相图
过渡(遗传学)
电子衍射
凝聚态物理
复合氧化物
X射线晶体学
图层(电子)
分子动力学
纳米技术
叠加断层
拓扑(电路)
结构变化
随机排序
原位
作者
Guifan Zeng,Linhui Zeng,Yonglin Tang,Yuhang Wu,Lianpeng Li,Chao Li,Qingsong Wang,Maolin Yang,Yu Qiao,Shi‐Gang Sun
摘要
Abstract In layered oxide cathodes, the utilization of high states of charge inevitably triggers complex phase transitions, accompanied by significant translational symmetry breaking. Although in situ X-ray diffraction has long been employed to monitor these transitions, quantitatively resolving the stochastic nature of planar defects remains a formidable challenge. In this work, we establish a robust analytical framework that correlates stacking faults with diffraction patterns, enabling the quantitative elucidation of one-dimensional stacking disorder. Taking the prototypical P2-to-O2 transition as a model, we demonstrate that this phase transition is a highly dynamic evolution governed by stochastic interlayer gliding. Through combined theoretical and experimental analyses, we reveal that the P2-to-O2 transition proceeds via an interlayer-asynchronized route, featuring an ordered OP6 intergrowth phase at the midpoint, which is an intermediate structure frequently misidentified as OP4 in the literature due to neglected unit cell periodicity constraints. Furthermore, by constructing and validating structural models that explicitly account for stacking defects, we establish a quantitative link among layer gliding, local coordination evolution, and subsequent transition-metal migration. Ultimately, the established descriptor framework serves as a standardized baseline amidst intricate structural evolutions, enabling the precise description and quantitative comparison of phase transition behaviors.
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