Evaluation of PVD SiCN for Cu/SiCN Hybrid Bonding

The Silicon Carbon Nitride (SiCN) has gained significant attention as a dielectric material in hybrid bonding due to its high bond strength, excellent surface roughness after chemical mechanical polishing, and copper diffusion barrier properties. Typically, SiCN deposition is carried out using plasma enhanced chemical vapor deposition (PECVD), involving high deposition and annealing temperatures exceeding 350°C. But, SiCN deposited by physical vapor deposition (PVD) has potential as a dielectric for hybrid bonding due to its low deposition temperature, low deposition contamination, and uniform film density. So, in this study, the deposition and properties of PVD SiCN thin films were investigated.