双金属片
材料科学
合金
钯
催化作用
氢
氧化物
密度泛函理论
半导体
金属
氢化物
检出限
氢传感器
纳米技术
光电子学
响应时间
工作温度
化学工程
反演(地质)
纳米尺度
动力学
电子
扩散
纳米传感器
作者
Shuang Cao,Bao Liu,Kehao Shangguan,Qi Lu,赫树开,Lingli Wang,Mengmeng Guo,Liying Jiang
出处
期刊:ACS Sensors
[American Chemical Society]
日期:2026-10-24
标识
DOI:10.1021/acssensors.6c03214
摘要
Palladium (Pd)-based sensitizers are widely employed to boost the hydrogen (H2) sensing properties of metal oxide semiconductor (MOS)-based sensors owing to their outstanding catalytic activity. However, the generation of palladium hydride (PdHx) induces strong electron scattering, causing an abnormal response inversion that compromises detection reliability. Herein, we proposed an electronic structure engineering induced by alloying to suppress response inversion. Metal-organic-framework-derived In2O3 hollow microtubes decorated with PdPt alloy were assembled into sensor devices and evaluated for H2 detection. The sensor with 0.5 wt.% PdPt loading achieves the optimal performance, with high sensitivity (9.5 to 100 ppm H2), ultrafast response/recovery kinetics (3 s/4 s), and a limit of detection as low as 500 ppb. Notably, the PdPt/In2O3 sensor completely eliminates abnormal response inversion in contrast to the Pd/In2O3 sensor. Density functional theory calculations reveal that the modification of the PdPt alloy preserves high catalytic activity toward H2 while effectively hindering the diffusion of H atoms into the Pd bulk, thereby ensuring sensitive and reliable sensing. Furthermore, the PdPt/In2O3 sensor array integrated with machine learning algorithms demonstrates reliable discrimination of H2 from interfering gases, highlighting its potential for practical gas monitoring. This study provides a rational electronic structure engineering strategy to suppress PdHx-induced response inversion, providing a clear experimental and theoretical foundation for the development of reliable H2 sensors.
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