High-Power InGaN Laser Array With Advanced Lateral-Corrugated Waveguides

Both high-beam-quality and high-power operation of InGaN laser array are realized by lateral-corrugated waveguides (LCWG) with reduced higher-order transverse modes. In our proposed structure, the number of higher-order modes supported by the waveguide and scattered by the LCWG is smaller than that of a conventional LCWG, which suppresses the deterioration of quantum efficiency. This contributes to high-power operation for laser processing, since the maximum output power of an array is sensitive to the efficiency. Even at 55 W from a single InGaN array chip, averaged lateral beam-quality factor of 4.9 is successfully obtained for individual emissions in the array.