Evolution of Tunnel Field-Effect Transistor and Scope in Low Power Applications: A Detailed Review

The emerging novel device tunnel field-effect transistor (TFET) has fascinated the scientific community with its distinct features such as lower subthreshold slope (SS), small leakage currents and minimized short channel effects. Hence, TFET was found to be an appropriate device for low power and high-frequency applications. The prime objective of this manuscript is to elaborate on recent significant contributions made by the researchers to surpass its limitations such as ambipolar behavior, low ION/IOFF ratio and to improve subthreshold swing (SS). The influence of temperature (200–400 K) and ferroelectric material on the device performance was also reviewed in detail.