单片微波集成电路
放大器
高电子迁移率晶体管
谐波
氮化镓
电气工程
晶体管
dBc公司
光电子学
材料科学
物理
拓扑(电路)
工程类
纳米技术
电压
图层(电子)
CMOS芯片
作者
F.F Yang,Leijun Song,Yuehang Xu
标识
DOI:10.1109/lmwc.2022.3216907
摘要
This letter presents a C-band 50-W high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25- $\mu \text{m}$ gallium nitride (GaN) high electron mobility transistor (HEMT) process. A multiple reactance matching method in output matching network (OMN) is proposed, which can achieve high harmonics suppression (HSs) while maintaining good bandwidth and low loss. The pulse excitation measurement results of the proposed MMIC show that the saturated output power exceeds 50 W in the 5–7-GHz frequency range, the power added efficiency (PAE) is more than 52%, the associated power gain is over 21 dB, and the second harmonic suppression (HS2) and the third harmonic suppression (HS3) reach more than 41 and 43 dBc, respectively. Besides, the area of the MMIC is $3.55\times4.05$ mm2.
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