Ultralow‐Energy‐Consumption Photosynaptic Transistor Utilizing Conjugated Polymers/Perovskite Quantum Dots Nanocomposites With Ligand Density Optimization

Abstract The photosynaptic transistor stands as a promising contender for overcoming the von Neumann bottleneck in the realm of photo‐communication. In this context, photonic synaptic transistors is developed through a straightforward solution process, employing an organic semiconducting polymer with pendant‐naphthalene‐containing side chains (PDPPNA) in combination with ligand‐density‐engineered CsPbBr3 perovskite quantum dots (PQDs). This fabrication approach allows the devices to emulate fundamental synaptic behaviors, encompassing excitatory postsynaptic current, paired‐pulse facilitation, the transition from short‐to‐long‐term memory, and the concept of “learning experience.” Notably, the phototransistor, incorporating the blend of the PDPPNA and CsPbBr3 PQDs washed with ethyl acetate, achieved an exceptional memory ratio of 104. Simultaneously, the same device exhibited an impressive paired‐pulse facilitation ratio of 223% at a moderate operating voltage of −4 V and an extraordinarily low energy consumption of 0.215 aJ at an ultralow operating voltage of −0.1 mV. Consequently, these low‐voltage synaptic devices, constructed with a pendant side‐chain engineering of organic semiconductors and a ligand density engineering of PQDs through a simple fabrication process, exhibit substantial potential for replicating the visual memory capabilities of the human brain.