光电探测器
响应度
光电子学
带宽(计算)
暗电流
材料科学
探测器
光通信
红外线的
光学
超晶格
限制
载流子寿命
光学滤波器
偏压
红外探测器
通信系统
干涉测量
比探测率
光电二极管
砷化镓
作者
Zhijian Shen,Cheng Li,Ting Xue,Zhidong Lyu,Zhecheng Dai,Zezheng Yang,Jian Huang,Liqi Zhu,W. H.,Xiaodan Pang,Jianliang Huang,Baile Chen
标识
DOI:10.1109/jlt.2026.3653409
摘要
Despite significant progress, high-speed mid-wave infrared (MWIR) photodetectors (PDs) still struggle to simultaneously achieve high bandwidth, high responsivity, and low dark current, limiting their suitability for practical applications. Here, we demonstrate an MWIR InAs/InAsSb type-II superlattice (T2SL) uni-traveling carrier (UTC) photodetector designed for high-speed operation. At room temperature and under a bias of $-$1 V, the device exhibits a dark current density of 2.75 A/cm $^{2}$, a peak responsivity of $\sim$0.8 A/W at 4 $\mu$ m, and a 3-dB bandwidth of 3.76 GHz. Increasing the bias to $-$2.5 V extends the 3-dB bandwidth to 7.21 GHz. Comprehensive modeling is performed to quantitatively evaluate the device performance. As aparse proof of concept, the packaged detector was integrated into a free-space optical communication (FSOC) system, achieving a data rate of 6 Gbaud with a clearly open non-return-to-zero (NRZ) eye diagram.
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