硫系化合物
杰纳斯
单层
二次谐波产生
群(周期表)
平面(几何)
凝聚态物理
光电子学
材料科学
化学
光学
纳米技术
物理
数学
几何学
激光器
有机化学
作者
Kaijuan Pang,Yadong Wei,Xiaodong Xu,Tao Ying,Weiqi Li,Xingji Li,Jianqun Yang,Yongyuan Jiang,Wei Quan Tian
标识
DOI:10.1021/acs.jpcc.1c03548
摘要
Using first-principles calculations, we first reported that Janus group III chalcogenide monolayers have giant out-of-plane second harmonic generation susceptibility, and it is even 1–2 orders of magnitude larger than that of the in-plane components. In the Ga 2 SSe monolayer, the χ zxx (2) /χ xxy (2) and χ zzz (2) /χ xxy (2) are up to 125:1 and 86:1, respectively. The large intraband\interband velocity transition matrix and charge transfer are responsible for the strong second harmonic response of Janus group III chalcogenide monolayers. The present work provides a general protocol to design two-dimensional nonlinear optical materials with strong out-plane response for applications in optoelectronic and nonlinear optical devices.
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