发光二极管
光电子学
材料科学
量子效率
二极管
光致发光
卤化物
激子
兴奋剂
锑
载流子
量子点
二进制数
宽禁带半导体
金属
自发辐射
有机发光二极管
荧光粉
发光
量子
作者
Jinyang Li,Kele Liao,Jiajia Zhang,Fanglong Yuan
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2026-01-09
卷期号:12 (2): eadz5689-eadz5689
被引量:1
标识
DOI:10.1126/sciadv.adz5689
摘要
Lead halide emitters hold great promise for next-generation light-emitting diodes (LEDs), but their heavy metal toxicity poses major barriers to commercialization. Therefore, developing efficient lead-free metal halide LEDs is highly desirable but remains a big challenge. Here, we report solution-processed lead-free antimony halide–based LEDs with an external quantum efficiency of 22% and a current efficiency of 55.84 candelas per ampere. The exceptional device performance is achieved through a binary host-guest architecture using a zero-dimensional organic-inorganic antimony(III) halide, which exhibits bright emission with a near-unity photoluminescence quantum yield. Optical and photophysical studies combined with theoretical calculations reveal the mechanism underlying its highly efficient self-trapped exciton emission. Efficient LEDs were achieved by doping (AylPPh 3 ) 2 SbCl 5 into a binary host system, which improved film morphology, enhanced charge carrier mobility, and achieved better carrier balance. These enhancements resulted in substantially superior device performance compared to nondoped LEDs with (AylPPh 3 ) 2 SbCl 5 as a neat emissive layer.
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