A novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5 kV power pack IGBT

A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes (at peak collector voltage=2500 V, T/sub j/=125/spl deg/C) and the short circuit capability of over 50 /spl mu/s (at V/sub CC/=1600 V, T/sub j/=125/spl deg/C) are successfully attained by a newly developed power pack IGBT. In this paper, simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.