| 标题 |
Persistent charge storage and memory operation of top-gate transistors solely based on two-dimensional molybdenum disulfide |
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| DOI | |
| 其它 |
期刊:Nanotechnology 作者:Po‐Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shu‐Wei Chang; Shih‐Yen Lin 出版日期:2023-04-26 |
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(2025-6-4)