Characterization of Defects and Deep Levels for GaN Power Devices

This book focuses on defects in GaN based on the most up-to-date intrinsic material properties, and addresses deep levels and their analytical methods within the wide bandgap of GaN. It demonstrates nanoscale structures of extended defects in GaN using atomic-scale transmission electron microscopy. The identifi cations of their deep levels and extended defect structures are presented by comparing with reported fi rst-principles calculations. It reviews emerging technologies for defect characterizations using atom probe tomography, synchrotron x-ray diffraction topography in wafer scale, and multiphoton-excitation photoluminescence, which allows for the multidirectional characterization of structural defects. Readers will gain insight into:Electrical impacts of defects in GaN-based vertical power devicesPathways to the defect control in the fabrication process of GaN-based electric devicesUp-to-date methods for semiconductor and electronic material defect analysis Characterization of Defects and Deep Levels for GaN Power Devices is an ideal reference for industry materials scientists working in semiconductor materials and devices. It is also suitable for experts in DLTS, TEM, APT, XRDT, and multiphoton-excitation photoluminescence.