单晶硅
薄脆饼
材料科学
超短脉冲
硅
光电子学
蚀刻(微加工)
共发射极
太阳能电池
晶体硅
棱锥(几何)
纳米技术
光学
物理
激光器
图层(电子)
作者
Lei Zhu,Shuai Zou,Mengfei Ni,Jinchang Ding,Chengbin Wu,Zheng Lu,Yulian Zeng,Xiaoya Ye,Xusheng Wang,Ronglei Fan,Huarui Sun,Baochen Liao,Yadong Xu,Mingrong Shen,Xiaodong Su
出处
期刊:Solar RRL
[Wiley]
日期:2022-03-28
卷期号:6 (7)
被引量:4
标识
DOI:10.1002/solr.202200204
摘要
Herein, an ultrafast random‐pyramid texturing process is proposed for monocrystalline silicon (mono‐Si) solar cells by combining metal‐catalyzed chemical etching (MCCE) and the standard alkaline texturing process. Namely, large numbers of artificial defects are introduced on the wafer surface in 3 min by MCCE; therefore, the process duration of alkaline texturing is largely shortened from 420 s for the as‐cut wafer to 180 s for the wafer with artificial defects due to its high surface reactivity. Moreover, those tiny artificial defects are apt to form small pyramids, resulting in a better light‐trapping performance. As a demonstration, the passivated emitter rear contact solar cell with ultrafast random pyramid texture achieves a power conversion efficiency of 23.02%. Therefore, such a cost‐effective ultrafast texturing strategy can open a promising new route toward the mass production of high‐efficiency industrial mono‐Si solar cells.
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