扫描仪
极紫外光刻
钥匙(锁)
计算机科学
薄脆饼
光学
材料科学
人工智能
物理
光电子学
计算机安全
作者
Natalia Davydova,Fei Liu,Markus P. Benk,Eelco van Setten,Gerardo Bottiglieri,Anton van Oosten,John McNamara,Vincent Wiaux,Joern-Holger Franke,Kenneth A. Goldberg,Dongseok Nam,Joseph Zekry,Patrick Naulleau,Timon Fliervoet,Rene Carpaij
摘要
The next-generation high-NA EUV scanner is being developed to enable patterning beyond the 3-nm technology node. Design and development of the scanner are based on rigorous litho-simulations. It is important to verify key imaging simulation findings by means of aerial image experiments with representative high-NA scanner characteristics. The first ASML-SHARP joint experiment was done with lines and spaces with pitches down to 16 nm wafer scale (1x). The experimental results confirmed the key litho-simulation findings: central obscuration’s impact on high-NA imaging and mitigations of obscuration’s impact using flex illuminations.
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