Sensitized Yb 3+ Luminescence in CsPbCl 3 Film for Highly Efficient Near‐Infrared Light‐Emitting Diodes

Abstract Near‐infrared (NIR) light emitting diodes (LEDs) with the emission wavelength over 900 nm are useful in a wide range of optical applications. Narrow bandgap NIR emitters have been widely investigated using organic compounds and colloidal quantum dots. However, intrinsically low charge mobility and luminescence efficiency of these materials limit improvement of the external quantum efficiency (EQE) of NIR LEDs, which is far from practical applications. Herein, a highly efficient NIR LED is demonstrated, which is based on an energy transfer from wide bandgap all inorganic perovskite (CsPbCl 3 ) to ytterbium ions (Yb 3+ ) as an NIR emitter doped in the perovskite crystalline film. High mobility of electrically excited carriers in the perovskite crystalline film provides a long carrier diffusion and enhances radiative recombination of an emission center due to minimized charge trapping losses, resulting in high EQE value in LEDs. The NIR emission of Yb 3+ at around 1000 nm is found to be sensitized by CsPbCl 3 thin film with a photoluminescence quantum yield over 60%. The LED based on Yb 3+ ‐doped CsPbCl 3 film exhibits a high EQE of 5.9% with a peak wavelength of 984 nm, achieved by high carrier transporting ability and effective sensitized emission property in the solid‐film structure.