Investigation of the parameters of deep centers in n-6HSiC epitaxial layers obtained by gas-phase epitaxy

Epitaxial layers of 6H-SiC obtained by gas-phase epitaxy have been investigated by capacitance spectroscopy methods. It is shown that deep centers are present in the test samples. Such centers were previously observed in SiC epitaxial layers obtained by sublimation epitaxy. However, the total density of deep acceptors in structures prepared by gas-phase epitaxy is two to three orders of magnitude lower than in epitaxial films obtained by sublimation epitaxy with the same value of N d -N a . It is suggested that the conditions of growth of the epitaxial layers influence the density and the type of defects formed in them.