Sensitive organic photodetector based on the PM6:Y6 system for imaging and optical communication applications

Photodetectors are essential components in intelligent systems. Conventional devices based on inorganic semiconductors (e.g., Si, Ge, and InGaAs) suffer from high fabrication costs and potential toxicity. To address these limitations, alternative material systems enabling low cost are highly desirable. Here, we demonstrate a high-performance organic photodetector (OPD) based on the PM6:Y6 bulk heterojunction, fabricated via solution-processed spin-coating. Compared to inorganic counterparts, this OPD exhibits superior cost-effectiveness and processing simplicity while achieving a responsivity of 450 mA/W, a detectivity of 3.4×10 11 Jones, and a fast response time of 80/80 ms. The device also shows a broad spectral response (350–900 nm) and an external quantum efficiency (EQE) of 78%. Furthermore, its practical utility was realized in imaging and optical communication systems, where it delivers high-resolution imaging and efficient signal transmission. These results underscore the promise of organic photodetectors for next-generation optoelectronic applications.