Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry

The existence of donor-type polymer field effect transistors (FETs), which are FETs exhibiting p-type characteristics and acceptor-type molecular FETs with n-type characteristics, provide an interesting possibility of a combined active bilayer system, especially under photoexcitation. We present a device structure and methodology that is conducive to study donor-acceptor interfacial processes using a FET platform. The changes in FET characteristics initiated by the photogenerated carriers in the donor coated acceptor device are studied using steady state and pulsed photoexcitation.