Carbon doped GaAs epitaxial layer grown by MOCVD

The GaAs epitaxial layers of various dopant concentration are grown with CCl4 as the doping source by the EMCORE D125 MOCVD system. The C-doped GaAs optical properties are studied by PL, DC XRD. With C dopant concentration increase, band gap shrink, FWHM of PL increase, and lattice constant decrease.