Growth and Laser Modulation Properties of KTa0.63Nb0.37O3 Single Crystals

KTa0.63Nb0.37O3 (KTN) single crystals were grown by a top seeded solution growth method. We found that the composition variation of crystal is smaller if the weight of melting raw materials is larger. The phase, dielectric property, and transmittance of the grown KTN single crystals were investigated. The dependence of dielectric constant on temperature indicated that crystal chips cutting from the shoulder, body, and bottom both have the same Tc value of 17 C, which suggests the homogeneity of the grown crystals. The laser modulation using a KTN chip indicates potential applications in deflectors due to the advantage of high angular accuracy.