神经形态工程学
材料科学
人工神经网络
冗余(工程)
尖峰神经网络
激活函数
瓶颈
门控
动态范围
CMOS芯片
计算机科学
计算机体系结构
宽动态范围
块(置换群论)
稳健性(进化)
动态随机存取存储器
逻辑门
电子工程
约束(计算机辅助设计)
人工智能
电压
作者
Changsong Gao,Mingqiang Liu,Abuduwayiti Aierken,Xuefei Liu,Degui Wang,Zhen Wang,Gang Wang,Yan Wu,Guangdong Zhou,Huipeng Chen,Jinshun Bi
标识
DOI:10.1002/adfm.202517785
摘要
Abstract Neuromorphic computing provides a promising solution to the von Neumann bottleneck and has received a lot of research attention. However, due to the limitation of static threshold activation of traditional neuromorphic devices, it is difficult to simulate the dynamic sparsity characteristics of biological neuron, resulting in more than 90% computational redundancy in fully connected neural networks architectures based on classical devices, which has become a key issue for efficient neuromorphic computing. Here, a dynamically adaptive activation neuron‐transistor based on asymmetric electrodes and indium gallium zinc oxide thin films is proposed, overcoming the static activation limitations of conventional neuromorphic devices. The device achieves a dynamic adaptive activation similar to biometric neuron via gate voltage or UV irradiation, achieving a wide range of activation times (65 ms–13.5 s) and adjustable activation thresholds (2.5–7.7 V). Leveraging this device, a dynamic sparse spiking neural network (DS‐SNN) is constructed that enables in situ Hadamard‐based weight pruning/regeneration. Applied to autonomous driving object detection, the DS‐SNN achieves 85% accuracy with 42% sparsity, outperforming dense convolutional/spiking neural networks (320k /140k weights) while utilizing only ≈80k parameters. This hardware‐algorithm co‐design establishes a new paradigm for energy‐efficient edge‐computing electronics, exploring 3D integration of large‐scale neuromorphic processors.
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