表征(材料科学)
复合数
材料科学
复合材料
纳米技术
作者
Marcio Florian,Luiz Eduardo Carvalho,Carlos Alberto Alves Cairo
出处
期刊:InTech eBooks
[InTech]
日期:2011-08-09
被引量:1
摘要
Silicon carbide exists in several polymorphic forms (over 150) and in each case, the bond between the Si and C is always tetrahedral. The simplest form is silicon carbide (SiC) in a cubic zinc blend structure, also called 3C-SiC or -SiC. The other polymorphs are a hexagonal network and are known as 2H-SiC, 4H-SiC, 6H-SiC shown in Figure 1, and all are listed as -SiC (Ching et al., 2006; Camassel, 2000).
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