过渡金属
范德瓦尔斯力
硫族元素
化学气相沉积
化学
拓扑绝缘体
半导体
超导电性
磁电阻
半金属
凝聚态物理
纳米技术
材料科学
带隙
光电子学
结晶学
物理
磁场
量子力学
生物化学
催化作用
分子
有机化学
作者
Gang Han,Dinh Loc Duong,Dong Hoon Keum,Seok Hyun Yun,Young Ho Lee
出处
期刊:Chemical Reviews
[American Chemical Society]
日期:2018-06-29
卷期号:118 (13): 6297-6336
被引量:200
标识
DOI:10.1021/acs.chemrev.7b00618
摘要
Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.
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