Establishment and simulation of Pspice static model for IGBT

Aim To research a new power device that is a static simulation model of insulated gate bipolar transistor(IGBT). Methods A static simulation model of IGBT is built and designed based on PSpice software.Besides analyzing the structure and parameter configurations of this model,the simulated transfer and output characteristics of the model are compared with actual device IRGB30B60K after simulating the model. Results/Conclusion The built static model of IGBT is not only accurate but also has a higher use value in IGBT device or system simulation.