稳健性(进化)
静电放电
基质(水族馆)
材料科学
计算机科学
光电子学
电气工程
电子工程
工程类
化学
电压
生物化学
基因
海洋学
地质学
作者
Ming-Dou Ker,Jia-Huei Chen,Kuo-Chun Hsu
标识
DOI:10.1109/vtsa.2005.1497063
摘要
A novel self-substrate-triggered (SST) technique is proposed to solve the nonuniform turn-on issue of the multi-finger GGNMOS for ESD protection. The first turned-on center finger is used to trigger on all fingers in the GGNMOS structure with self-substrate-triggered technique. So, the turn-on uniformity and ESD robustness of GGNMOS can be greatly improved by the new proposed self-substrate-triggered technique.
科研通智能强力驱动
Strongly Powered by AbleSci AI